250 nm process


The 250 nm process refers to a level of MOSFET semiconductor process technology that was commercialized by semiconductor manufacturers around the 1996-1998 timeframe.
A 250 nm CMOS process was demonstrated by a Japanese NEC research team led by Naoki Kasai in 1987. In 1988, an IBM research team led by Iranian engineer Bijan Davari fabricated a 250nm dual-gate MOSFET using a CMOS process.

Products featuring 250 nm manufacturing process