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Rzhanov Institute of Semiconductor Physics
Rzhanov Institute of
Semiconductor Physics
of the Siberian
Branch
of the RAS
is a
research institute
in
Akademgorodok
of
Novosibirsk, Russia
. It was
founded
in 1964.
History
The institute
was created in 1964 by merging the
Institute of Solid State Physics
and
Semiconductor Electronics
and
the Institute
of
Radiophysics
and
Electronics
.
In the 1970s,
the institute
began to
work
on
developing
molecular-beam epitaxy
methods
.
Scientific
activity
Development
of the physical
fundamentals
of microelectronics,
acousto-electronics
, microphotoelectronics,
quantum electronics
; the study of
physical phenomena
in semiconductor
thin-film
structures etc.
